The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Mar. 02, 2023
Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;
Keita Matsuda, Kanagawa, JP;
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a semiconductor element formed on the semiconductor substrate, a first insulating film covering the semiconductor element, a second insulating film formed on the first insulating film, and a third insulating film formed on the second insulating film. The first and third insulating films allow less moisture to pass than the second insulating film. A dielectric constant of the second insulating film is lower than dielectric constants of the first and third insulating films. The first insulating film has a first portion that is in contact with a first region of an upper surface of the semiconductor substrate. The third insulating film has a second portion that is in contact with upper and side surfaces of the first portion and a second region of the upper surface. The second region is farther away from the semiconductor element than the first region.