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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12469782 B1

PDFFull Text
Date of Patent:
Nov. 11, 2025

Filed:

Apr. 29, 2022

Equalization circuit structure and manufacturing method thereof, sense amplification circuit structure and memory circuit structure

Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yang Zhao, Hefei, CN;

Jaeyong Cha, Hefei, CN;

Assignee:

CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

Mohammad M Hoque

Int. Cl.
CPC ...
H01L 23/52 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); G11C 7/06 (2013.01); G11C 7/12 (2013.01); H01L 23/538 (2013.01); H10D 84/0126 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

An equalization circuit structure includes a semiconductor substrate including an equalization active region; a gate layer including a gate pattern and a power supply line, wherein the gate pattern is disposed on the equalization active region and configured for forming a transistor unit with the equalization active region, and the power supply line electrically connects the equalization active region with an external power supply and is configured for supplying power to the transistor unit.

Find Patent Forward Citations

Zhao, Yang. (2025). Equalization circuit structure and manufacturing method thereof, sense amplification circuit structure and memory circuit structure (U.S. Patent No. 12469782). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12469782

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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