The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 27, 2023
Gta Semiconductor Co., Ltd., Shanghai, CN;
Guoqing Leng, Shanghai, CN;
GTA SEMICONDUCTOR CO., LTD., Shanghai, CN;
Abstract
A method for manufacturing a trench in a semiconductor substrate, and a semiconductor device are provided. The method includes: providing the semiconductor substrate; forming a hard mask layer on the semiconductor substrate, performing exposure and development to etch the hard mask layer and the semiconductor substrate to form a trench in the semiconductor substrate, the trench having a side surface and a bottom surface with an angle therebetween being greater than 90 degrees; irradiating the trench with a laser beam, such that a semiconductor material of a part of the semiconductor substrate within a first distance from the side surface or the bottom surface of the trench is melted; and cooling the semiconductor substrate, such that at least one of the side surface or the bottom surface of the trench is re-shaped to have a lower surface roughness than before.