The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Nov. 10, 2023
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Wenlun Zhang, Chofu, JP;
Hiroki Fujisawa, Sagamihara, JP;
Shinichi Miyatake, Sagamihara, JP;
Yuan He, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 5/14 (2006.01); G11C 11/4091 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 5/147 (2013.01); G11C 11/4096 (2013.01);
Abstract
Sense amplifiers for memory devices may include threshold voltage compensation circuitry configured to compensate a threshold voltage offset of a portion of the sense amplifier. Additionally, the sense amplifiers also perform pre-sensing of the portion of the sense amplifier. Moreover, the sense amplifier is configured to perform main sensing and latching in a phase after pre-sensing the portion of the sense amplifier.