The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
May. 23, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Charles See Yeung Kwong, Redwood City, CA (US);
Seungjune Jeon, Santa Clara, CA (US);
Wei Wang, Dublin, CA (US);
Zhenming Zhou, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/07 (2006.01);
U.S. Cl.
CPC ...
G06F 11/076 (2013.01); G06F 11/008 (2013.01); G06F 11/073 (2013.01); G06F 2201/81 (2013.01); G06F 2212/7211 (2013.01);
Abstract
A first blocks of a set of blocks of a memory device is identified. A die on which the first block resides is identified among a plurality of dies of the memory device. A threshold value associated with the die is selected from a range associated with a projected reliability metric of the die. Responsive to determining that an endurance metric value associated with the die matches the threshold value, a program operation is performed with respect to a second block of the set of blocks.