The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jul. 08, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Bo Zhou, Shanghai, CN;

Qilin Pan, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 1/28 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/064 (2013.01); G06F 1/28 (2013.01); G06F 3/0614 (2013.01); G06F 3/0673 (2013.01);
Abstract

Methods, systems, and devices for read performance techniques for time retention are described. A memory system may store data in a block of memory cells and perform a power cycle operation. Based on performing the power cycle operation, the memory system may determine a first voltage offset associated with the block of memory cells by executing a first read command using an auto-read calibration operation. Based on the first voltage offset, and, in some examples, one or more additional voltage offsets, the memory system may calculate a retention time of data stored in the block of memory cells. The memory system may adjust a read voltage based on the retention time and perform one or more additional read commands.


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