The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Nov. 22, 2021
Horiba Stec, Co., Ltd., Kyoto, JP;
Horiba, Ltd., Kyoto, JP;
Yuhei Sakaguchi, Kyoto, JP;
Masakazu Minami, Kyoto, JP;
Kyoji Shibuya, Kyoto, JP;
Motonobu Takahashi, Kyoto, JP;
HORIBA STEC, CO., LTD., Kyoto, JP;
HORIBA, LTD., Kyoto, JP;
Abstract
The present invention is a gas analysis device that measures a concentration or partial pressure of a halide contained in a material gas used in semiconductor manufacturing process or a by-product gas generated in semiconductor manufacturing process with good accuracy, the device being for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the device including a gas cell into which the material gas or the by-product gas is introduced, a laser light source that irradiates the gas cell with laser light whose wavelength is modulated, a light detector that detects the laser light transmitted through the gas cell, and a signal processing unit that calculates the concentration or partial pressure of the halide by using a light absorption signal obtained from an output signal of the light detector.