The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jun. 17, 2022
Applicants:

L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris, FR;

Air Liquide Electronics U.s. Lp, Dallas, TX (US);

Inventors:

Bo Peng, Fremont, CA (US);

Julien Gatineau, Jouy-en-Josas, FR;

Ziyun Wang, Dallas, TX (US);

Yumin Liu, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/40 (2013.01); C23C 16/45531 (2013.01); C23C 16/45553 (2013.01);
Abstract

A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula:(NRR)(NRR)Ga[(RRN)C(RR)(NR)]  (I)(Cy-N)Ga[(RRN)C(RR)(NR)]  (II)wherein, Rto Rare independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; Rto Rmay be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.


Find Patent Forward Citations

Loading…