The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jan. 17, 2022
Applicant:

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, CN;

Inventors:

Hui Zhang, Shanghai, CN;

Xuejian Liu, Shanghai, CN;

Jindi Jiang, Shanghai, CN;

Xiumin Yao, Shanghai, CN;

Zhengren Huang, Shanghai, CN;

Zhongming Chen, Shanghai, CN;

Jian Huang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/584 (2006.01); C04B 35/638 (2006.01); C04B 35/64 (2006.01); C04B 37/00 (2006.01);
U.S. Cl.
CPC ...
C04B 37/003 (2013.01); C04B 35/584 (2013.01); C04B 35/638 (2013.01); C04B 35/64 (2013.01); C04B 2235/428 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/6582 (2013.01); C04B 2237/08 (2013.01); C04B 2237/368 (2013.01);
Abstract

The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.


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