The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jan. 03, 2025
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventor:
Ching-Shan Lin, Hsinchu, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); B24B 5/50 (2006.01); B28D 1/22 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 28/02 (2006.01); C30B 28/14 (2006.01); C30B 29/36 (2006.01); C30B 29/60 (2006.01); C30B 33/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B24B 5/50 (2013.01); B28D 1/22 (2013.01); B32B 3/00 (2013.01); C30B 23/002 (2013.01); C30B 23/02 (2013.01); C30B 23/06 (2013.01); C30B 28/02 (2013.01); C30B 28/14 (2013.01); C30B 29/36 (2013.01); C30B 29/60 (2013.01); C30B 33/00 (2013.01); H01L 21/02013 (2013.01);
Abstract
A silicon carbide wafer having a seed end and a dome end opposite to the seed end. In the silicon carbide wafer, a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cmat both the seed end and the dome end, and a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cmat both the seed end and the dome end.