The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Apr. 08, 2024
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Petar Atanackovic, Henley Beach South, AU;
Silanna UV Technologies Pte Ltd, Singapore, SG;
Abstract
The techniques described herein relate to a transistor including a substrate including sapphire, an epitaxial channel layer on the substrate, and an epitaxial gate layer on the channel layer. The epitaxial channel layer can include α-GaO, with a first bandgap. The epitaxial gate layer can include an oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts, including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the epitaxial gate layer.