The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Nov. 16, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Te-Hsin Chiu, Miaoli County, TW;

Shih-Wei Peng, Hsinchu, TW;

Wei-An Lai, Taichung, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H01L 23/481 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01);
Abstract

A semiconductor device and a method of manufacturing the device are disclosed. In one aspect, the semiconductor device includes a first active region that extends along a first lateral direction and includes a plurality of first epitaxial structures. The semiconductor device also includes an interconnect structure that also extends along the first lateral direction and is disposed below the first active region, wherein at least one of the plurality of first epitaxial structures is electrically coupled to the interconnect structure. The interconnect structure includes at least a first portion that offsets from the first active region along a second lateral direction perpendicular to the first lateral direction.


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