The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Apr. 02, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Liang-Yu Su, Yunlin County, TW;

Chih-Wen Yao, Hsinchu, TW;

Hsiao-Chin Tuan, Ju Dong County, TW;

Ming-Ta Lei, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/64 (2025.01); H10D 1/00 (2025.01); H10D 62/10 (2025.01); H10D 84/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/64 (2025.01); H10D 1/045 (2025.01); H10D 62/109 (2025.01); H10D 84/215 (2025.01);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip including a first doped region in a substrate and comprising a first doping type. A gate structure is over the first doped region. A pair of contact regions are in the substrate on opposing sides of the gate structure and comprising the first doping type. The first doped region continuously laterally extends between the pair of contact regions and contacts the pair of contact regions. A second doped region is in the substrate and along a bottom of the first doped region. The second doped region comprises a second doping type opposite the first doping type.


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