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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12463065 B1

PDFFull Text
Date of Patent:
Nov. 04, 2025

Filed:

Jul. 29, 2022

Gas flow control during semiconductor fabrication

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Yu-Liang Yeh, Kaohsiung, TW;

Chih-Kang Chao, Tainan, TW;

Bing Kai Huang, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;

Attorney:

Cooper Legal Group, LLC

Primary Examiner:

Duy Vu N Deo

Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); C23C 16/44 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/32623 (2013.01); H01J 37/32816 (2013.01); H01J 37/32834 (2013.01); H01L 21/30604 (2013.01); H01L 21/32136 (2013.01); C23C 16/4412 (2013.01); H01J 37/32449 (2013.01); H01L 21/311 (2013.01); Y10S 438/935 (2013.01);
Abstract

A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber. A flow of the process gas is controlled by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port.

Find Patent Forward Citations

Yeh, Yu-Liang. (2025). Gas flow control during semiconductor fabrication (U.S. Patent No. 12463065). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12463065

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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