Semiconductor structure and forming method thereof

Abstract

Semiconductor structures and forming methods are disclosed. One form of a method includes: forming mask spacers on a base; patterning a target layer using the mask spacers as masks, to form discrete initial pattern layers, where the initial pattern layers extend along a lateral direction and grooves are formed between a longitudinal adjacent initial pattern layers; forming boundary defining grooves that penetrate through the initial pattern layers located at boundary positions of the target areas and cutting areas along the lateral direction; forming spacing layers filled into the grooves and the boundary defining grooves; and using the spacing layers located in boundary defining grooves and the spacing layers located in the grooves as stop layers along the lateral and the longitudinal directions respectively, etching the initial pattern layers located in the cutting areas, and using the remaining initial pattern layers located in the target areas as the target pattern layers.