The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Apr. 15, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xiaojiang Guo, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A memory device includes memory cells coupled to a same word line and bit lines, respectively, and a peripheral circuit coupled to the memory cells through the word and bit lines. Each memory cell is in one state. The peripheral circuit is configured to determine a first number of a first set of the memory cells and a second number of a second set of the memory cells in parallel. Threshold voltages of the first set of the memory cells are between a first voltage and a second voltage larger than the first voltage. Threshold voltages of the second set of the memory cells are between the second voltage and a third voltage larger than the second voltage. The peripheral circuit is also configured to determine a first read level corresponding to a first state based on the first number and the second number.