The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Apr. 21, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John Christopher Sancon, Boise, ID (US);

Yang Lu, Boise, ID (US);

Kang-Yong Kim, Boise, ID (US);

Mark Kalei Hadrick, Boise, ID (US);

Hyun Yoo Lee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40615 (2013.01); G11C 11/40618 (2013.01); G11C 11/4085 (2013.01);
Abstract

Described apparatuses and methods relate to a bank-level self-refresh for a memory system. A memory device can include a controller with logic that implements self-refresh operations in the memory device. The logic may perform self-refresh operations on a set of banks of the memory device that is less than all banks within the memory device. The set of banks of the memory device may be determined such that the peak current in a power distribution network of the memory device is bounded when the self-refresh operation is performed. Accordingly, bank-level self-refresh can reduce a cost of the memory device of a memory system by enabling use of a less complicated power distribution network. The bank-level self-refresh may also be implemented with different types of refresh operations. Amongst other scenarios, bank-level self-refresh can be deployed in memory-expansion environments.


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