IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12462852 B1

PDFFull Text
Date of Patent:
Nov. 04, 2025

Filed:

Dec. 16, 2022

Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Peng Xu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

William B Partridge

Assistant Examiner:

Gustavo G Ramallo

Int. Cl.
CPC ...
G11C 5/06 (2006.01); C23C 8/06 (2006.01); C23C 8/36 (2006.01); C23C 28/00 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); C23C 8/06 (2013.01); C23C 8/36 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

Find Patent Forward Citations

Loading…