The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jun. 06, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Ryan Sporer, Mechanicville, NY (US);
Karen Nummy, Newburgh, NY (US);
Keith Donegan, Saratoga Springs, NY (US);
Thomas Houghton, Marlboro, NY (US);
Yusheng Bian, Ballston Lake, NY (US);
Takako Hirokawa, Ballston Lake, NY (US);
Kenneth Giewont, Hopewell Junction, NY (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
IC chips for photonics applications are disclosed. An example IC chip includes a substrate, an optical component above the substrate, and a first connection level above the substrate. The first connection level includes the optical component and a first cladding structure, in which the optical component is covered by the first cladding structure. The IC chip also includes a second connection level on the first connection level. The second connection level includes a first interlayer dielectric material. The IC chip further includes a second cladding structure directly above the optical component. The second cladding structure has at least a section within the second connection level. The second cladding structure is on the first cladding structure. The second cladding structure is laterally adjacent to and in direct contact with the first interlayer dielectric material. The second cladding structure includes a material different from the first interlayer dielectric material.