The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

May. 22, 2024
Applicant:

Stmicroelectronics International N.v., Geneva, CH;

Inventors:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/481 (2006.01); G01S 17/894 (2020.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
G01S 7/4816 (2013.01); G01S 17/894 (2020.01); H10F 39/8033 (2025.01); H10F 39/807 (2025.01);
Abstract

The present disclosure relates to a process to control an optoelectronic device comprising a single-photon avalanche diode n a substrate, wherein the diode comprises a first region doped with a first type of conductivity level with a first face of the substrate and a second region doped with a second type of conductivity extending from the first face to a second face of the substrate opposed to the first face, wherein the device comprises a third conducting or semiconducting region at the second face, wherein the process comprises the application of a biasing voltage to the third region in order to generate an electric field that accelerates the charges generated in the diode.


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