The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Sep. 29, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
David Eitan Barlaz, Albany, NY (US);
Scott Lefevre, Albany, NY (US);
Joshua Larose, Albany, NY (US);
Henry Puretz, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); G01N 21/01 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01N 21/01 (2013.01); G01N 21/6445 (2013.01); H01L 21/67253 (2013.01); H01L 21/68742 (2013.01); H01L 22/12 (2013.01);
Abstract
A system and a method directed to a monitoring system of semiconductor processing chambers is provided. In particular, monitoring of any chemical formation on a chamber and a wafer of a semiconductor processing chamber using in-situ laser induced fluorescence is provided. The monitoring system and method detect issues before they become a problem for the semiconductor processing chambers by providing diagnosis on chamber health and mechanisms for associated process shifts with a faster turnaround time.