The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Sep. 13, 2022
International Business Machines Corporation, Armonk, NY (US);
Oscar Van Der Straten, Guilderland Center, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method to form a semiconductor structure for a magnetoresistive random-access memory (MRAM) device where the material for the top electrode and the bottom electrode is deposited in a single process. The method includes conformally depositing an electrode material over a magnetic tunnel junction (MTJ) pillar, under the MTJ pillar, around a spacer encapsulating and extending above the MTJ pillar. The method includes recessing the electrode material to form a thinner portion of the electrode material over the MTJ pillar. The thinner portion of the electrode material forms a thinner portion of the electrode material over the MTJ pillar that is a top electrode. The portion of the electrode material under the MTJ pillar forms a bottom electrode that is thicker than the top electrode.