The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jan. 21, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuan-Yu Chen, Hsinchu, TW;

Wei-Cheng Tzeng, Taipei, TW;

Shih-Wei Peng, Hsinchu, TW;

Wei-Cheng Lin, Taichung, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); G06F 30/31 (2020.01); G06F 30/392 (2020.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); G06F 30/31 (2020.01); G06F 30/392 (2020.01); H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01);
Abstract

A device including first nanosheet structures each including a first number of nanosheets, second nanosheet structures each including a second number of nanosheets that is different than the first number of nanosheets, and a plurality of rows including first rows and second rows. Where each of the first nanosheet structures is in a respective one of the first rows, each of the second nanosheet structures is in a respective one of the second rows, at least two of the first rows are adjacent one another, and at least two of the second rows are adjacent one another.


Find Patent Forward Citations

Loading…