The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Nov. 01, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Brent A. Anderson, Jericho, VT (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Albert M. Chu, Nashua, NH (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A vertical transport field effect transistor (VTFET) apparatus includes a fin-shaped channel structure; a gate stack that surrounds the channel structure; a top source/drain structure at a top end of the channel structure; a top interconnect layer above the top source/drain structure; a top contact that electrically connects the top source/drain structure to the top interconnect layer; a bottom source/drain structure at a bottom end of the channel structure; a backside interconnect layer below the bottom source/drain structure; and a backside contact that touches a bottom surface of the bottom source/drain structure and also touches a side surface of the bottom source/drain structure and electrically connects the bottom source/drain structure to the backside interconnect layer.