The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Feb. 22, 2023
SK Keyfoundry Inc., Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
Min Kuck Cho, Cheongju-si, KR;
Jung Hwan Lee, Cheongju-si, KR;
Yang Beom Kang, Cheongju-si, KR;
Hyun Chul Kim, Cheongju-si, KR;
SK keyfoundry Inc., Cheongju-si, KR;
Abstract
A semiconductor device is provided. The semiconductor device includes a first region having a first gate structure disposed on a substrate and a second region having a second gate structure disposed on the substrate, a hard mask formed on the substrate, the first gate structure, and the second gate structure, a deep trench formed in the substrate between the first region and the second region, and formed to penetrate the hard mask to reach an inside of the substrate, and a planarized gap-fill insulating layer formed on the second gate structure and formed inside the deep trench. A topmost surface of the planarized gap-fill insulating layer and a topmost surface of the hard mask are coplanar.