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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12457752 B1

PDFFull Text
Date of Patent:
Oct. 28, 2025

Filed:

Aug. 18, 2022

High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor

Applicant:

Kepler Computing Inc., San Francisco, CA (US);

Inventors:

Sasikanth Manipatruni, Portland, OR (US);

Rajeev Kumar Dokania, Beaverton, OR (US);

Ramamoorthy Ramesh, Moraga, CA (US);

Assignee:

Kepler Computing Inc., San Francisco, CA (US);

Attorney:

MUGHAL GAUDRY & FRANKLIN PC

Primary Examiner:

Brigitte A Paterson

Int. Cl.
CPC ...
H10B 53/30 (2023.01); G11C 11/22 (2006.01); H01L 21/02 (2006.01); H10B 12/00 (2023.01); H10B 53/20 (2023.01); H10D 1/68 (2025.01); H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); H01L 21/02197 (2013.01); H10B 12/36 (2023.02); H10B 53/20 (2023.02); H10D 1/682 (2025.01); H10D 1/684 (2025.01); H10D 1/694 (2025.01); H10D 1/696 (2025.01); H10D 1/716 (2025.01); H10D 30/6211 (2025.01);
Abstract

Described is a low power, high-density a 1T-1C (one transistor and one capacitor) memory bit-cell, wherein the capacitor comprises a pillar structure having ferroelectric material (perovskite, improper ferroelectric, or hexagonal ferroelectric) and conductive oxides as electrodes. In various embodiments, one layer of the conductive oxide electrode wraps around the pillar capacitor, and forms the outer electrode of the pillar capacitor. The core of the pillar capacitor can take various forms.

Find Patent Forward Citations

Manipatruni, Sasikanth. (2025). High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor (U.S. Patent No. 12457752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12457752

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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