The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Nov. 01, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/20 (2023.01); H01L 21/02 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10B 41/20 (2023.02); H01L 21/02164 (2013.01); H01L 21/0228 (2013.01); H10D 84/0133 (2025.01); H10D 84/038 (2025.01);
Abstract
Systems, methods and apparatus are provided for two transistor cells for vertical three-dimensional memory. The memory has serially connected horizontally oriented transistors each having an independent first source/drain region and a shared second source/drain region separated by channel regions, and gates opposing the channel regions and separated therefrom by a gate dielectric; pairs of vertically oriented access lines coupled to the gates and separated from the channel region by the gate dielectric; and horizontally oriented digit lines electrically coupled to the first source/drain regions of the horizontally oriented transistors.