The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jul. 19, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Chihcheng Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a capacitor opening hole and a method for forming a memory capacitor are provided. The method for forming a capacitor opening hole includes: providing a substrate, and forming a sacrificial layer and a supporting layer, which are stacked, on the surface of the substrate (S); forming multiple hollow first side wall structures, spaced apart, on the surface of the supporting layer (S); forming a second material layer on the surface of the first side wall structure to constitute a second side wall structure (S); and etching the sacrificial layer and the supporting layer by taking the first side wall structure and the second side wall structure as masks to form the capacitor opening hole (S).