The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Oct. 07, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Dietrich Bonart, Bad Abbach, DE;

Bernhard Weidgans, Bernhardswald, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/03001 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05566 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05638 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06515 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/04941 (2013.01);
Abstract

A semiconductor die includes: a semiconductor substrate; a first contact pad structure above the semiconductor substrate, the first contact pad structure including a metal contact pad configured for electrical contact and a metal layer adjoining an underside of the metal contact pad and jutting out beyond an edge of the metal contact pad; and a first optical detection marker in a periphery of the first contact pad structure and having a different contrast than the metal contact pad. The first optical detection marker includes a region of the metal layer that is adjacent to the edge of the metal contact pad and unobstructed by the metal contact pad so as to be optically visible in a plan view of the semiconductor die. A method of producing the semiconductor die is also described.


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