The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Feb. 08, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-An Lai, Hsinchu, TW;
Shih-Wei Peng, Hsinchu, TW;
Wei-Cheng Lin, Taichung, TW;
Jiann-Tyng Tzeng, Hinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Apparatus and methods for generating a physical layout for a high density routing circuit are disclosed. An exemplary semiconductor structure includes: a gate structure; a plurality of first metal lines formed in a first dielectric layer below the gate structure; at least one first via formed in a second dielectric layer between the gate structure and the first dielectric layer; a plurality of second metal lines formed in a third dielectric layer over the gate structure; and at least one second via formed in a fourth dielectric layer between the gate structure and the third dielectric layer. Each of the at least one first via is electrically connected to the gate structure and a corresponding one of the plurality of first metal lines. Each of the at least one second via is electrically connected to the gate structure and a corresponding one of the plurality of second metal lines.