The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Apr. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Gerben Doornbos, Kessel-Lo, BE;
Mauricio Manfrini, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10D 30/0411 (2025.01); H10D 30/0413 (2025.01); H10D 30/68 (2025.01); H10D 30/6894 (2025.01); H10D 30/69 (2025.01); H10D 30/699 (2025.01); H10D 64/035 (2025.01); H10D 64/037 (2025.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a memory structure including a first transistor channel, a gate structure overlying the first transistor channel, and a second transistor channel overlying the gate structure. The gate structure includes a control gate.