The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Aug. 11, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Ryuichi Ishii, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49548 (2013.01); H01L 21/56 (2013.01); H01L 23/3121 (2013.01); H01L 23/49513 (2013.01); H01L 23/49537 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 24/26 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 2224/26175 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/3303 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/83815 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
Provided is a resin-sealed semiconductor device that can regulate the thickness of a joining material joining a semiconductor element and a lead frame and inhibit the joining material from leaking out of a proper range. The resin-sealed semiconductor device includes a second lead frame joined via a second joining material above a semiconductor element joined above a heat spreader. The second lead frame has, on a surface thereof opposed to the semiconductor element, a protrusion to regulate a thickness of the second joining material, and a groove formed at a peripheral part of the second joining material.