The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Dec. 27, 2021
Applicant:

Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US);

Inventors:

Gaius Gillman Fountain, Jr., Youngsville, NC (US);

Cyprian Emeka Uzoh, San Jose, CA (US);

George Carlton Hudson, San Jose, CA (US);

John Posthill, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/53238 (2013.01); H01L 24/08 (2013.01); H01L 2224/08146 (2013.01);
Abstract

A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.


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