The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Apr. 15, 2021
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Jin Won Jeong, Seoul, KR;

Jae Sik Choi, Cheongju-si, KR;

Byeung Soo Song, Sejong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/268 (2013.01); H01L 21/3043 (2013.01); H01L 21/67092 (2013.01);
Abstract

A semiconductor die forming method includes preparing a wafer, forming a low-k dielectric layer on the wafer, forming a metal pad on the low-k dielectric layer, forming a passivation layer on the metal pad, patterning the passivation layer, laser grooving the low-k dielectric layer using an ultrashort pulse laser, and cutting the wafer by mechanical sawing to form one or more semiconductor dies.


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