The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Aug. 09, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyunsu Hwang, Siheung-si, KR;

Suhyeon Ku, Asan-si, KR;

Junyun Kweon, Cheonan-si, KR;

Solji Song, Suwon-si, KR;

Dongjoon Oh, Suwon-si, KR;

Chungsun Lee, Asan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32642 (2013.01); H01J 2237/334 (2013.01);
Abstract

Provided is a dry etching apparatus including: a plasma process chamber; an edge ring which is arranged in the plasma process chamber and on which a wafer is mounted; a shadow ring positioned to be spaced apart by a first vertical distance above the edge ring during a plasma etching process of the wafer; an operation unit coupled to the shadow ring and having a lift pin that raises and lowers the shadow ring; a fixing portion having a plurality of fixing pins engaged with the lift pin at different positions to fix a lowering point of the shadow ring; and a distance control unit that controls the fixing portion to determine the first vertical distance, wherein the first vertical distance is determined by a first horizontal distance between the wafer and the edge ring.


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