The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Dec. 15, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
The present disclosure discloses a memory device, a memory system, and a method for operating a memory device, belonging to the field of storage technology. In the present disclosure, by turning off the first switch circuit, turning on the second switch circuit and providing the first voltage to the first node, the first voltage is applied on the second terminal of the drive transistor through the second switch circuit and the source line, the second terminal of the drive transistor is coupled to a control terminal, such that the voltage of the control terminal changes as the voltage of the second terminal changes, since the first voltage is greater than the threshold voltage of the drive transistor, the drive transistor is turned on to trigger the drive transistor to assist the corresponding memory string in performing a gate-induced-drain-leakage (GIDL) erase.