The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Aug. 19, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jeonghoon Oh, Saratoga, CA (US);

Manoj A. Gajendra, Bangalore, IN;

John Anthony Garcia, San Jose, CA (US);

Chetan Kumar Mylappanahalli Narasingaiah, Bangalore, IN;

Sanjay Bhanurao Chavan, Bangalore, IN;

Gagan Dobhal, Bangalore, IN;

Manoj Balakumar, Bangalore, IN;

Jamie Stuart Leighton, Palo Alto, CA (US);

Van H. Nguyen, Milpitas, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B24B 57/02 (2006.01); B24B 37/04 (2012.01); B24B 37/10 (2012.01); B24B 37/30 (2012.01); B24B 37/34 (2012.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B24B 57/02 (2013.01); B24B 37/042 (2013.01); B24B 37/105 (2013.01); B24B 37/30 (2013.01); B24B 37/34 (2013.01); H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/02019 (2013.01);
Abstract

A system and method for sequential single-sided CMP processing of opposite facing surfaces of a silicon carbide (SiC) substrate are disclosed. A method includes urging a first surface of a substrate against one of plurality of polishing pads, wherein the plurality of polishing pads are disposed on corresponding ones of a plurality of rotatable polishing platens. The method includes transferring, using the first side of the end effector, the substrate from the substrate carrier loading station to a substrate alignment station. The method includes transferring, using the first side of the end effector, the substrate from the substrate alignment station to a substrate carrier loading station. The method includes urging a second surface of the substrate against one of the plurality of polishing platens.


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