The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 31, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu Ling Ou, Tainan, TW;
Chia-Jung Hsu, Tainan, TW;
Chia-Yu Wei, Tainan, TW;
Kuo-Cheng Lee, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device may include a single-photon avalanche diode (SPAD) arranged for illumination at a back surface of a substrate. The semiconductor device may include a full deep trench isolation (FDTI) structure between the SPAD and a neighboring SPAD of the semiconductor device. The FDTI may be associated with isolating the SPAD from the neighboring SPAD. The FDTI structure may include a shallow trench isolation (STI) element at the back surface of the substrate. The FDTI structure may include a deep trench isolation (DTI) element at a front surface of the substrate.