The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Apr. 23, 2024
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Kyong Jin Hwang, Singapore, SG;
Jie Zeng, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/111 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 64/112 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to high-voltage electrostatic discharge devices and methods of manufacture. The structure includes: a semiconductor material including an emitter region, a base region adjacent to the emitter region; and a collector region; a thermally grown insulator region on the semiconductor material extending from the base region to the collector region; and a field plate on the thermally grown insulator region and overlapping with the base region.