The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Sep. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien-Hao Huang, Hsinchu, TW;
Gao-Ming Wu, New Taipei, TW;
Katherine H Chiang, New Taipei, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Provided are a transistor structure and a method of forming the same. The transistor structure includes a gate electrode; a gate dielectric layer, disposed on the gate electrode; an active layer, disposed on the gate dielectric layer; a pair of source/drain (S/D) features, disposed on the active layer; and an isolation structure, laterally surrounding the pair of S/D features, wherein the isolation structure at least comprises a blocking layer and an upper dielectric layer on the blocking layer.