The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tai-Yuan Wang, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate. The fin structure includes alternately stacking first sacrificial layers and first channel layers. The method also includes forming source/drain features on opposite sidewalls of the fin structure, etching the fin structure to form gate recesses in the fin structure, removing the first sacrificial layers of the fin structure from the gate recesses, thereby forming first gaps exposing the first channel layers, and forming a gate stack in the gate recesses and the first gaps.