The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Sep. 10, 2024
Applicant:
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Inventor:
Petar Atanackovic, Henley Beach South, AU;
Assignee:
Silanna UV Technologies Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 8/01 (2025.01); H10D 62/40 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 8/051 (2025.01); H10D 62/40 (2025.01); H10D 62/8325 (2025.01);
Abstract
A multilayered semiconductor diode device can include a substrate including silicon carbide (SiC) with an epitaxial drift layer including a first semiconductor oxide material above the SiC substrate with respect to a growth direction. The multilayered semiconductor diode device can further include a polar nitride layer including a polar semiconductor nitride material above the epitaxial drift layer with respect to the growth direction, and a metal layer above the polar nitride layer with respect to the growth direction.