The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

May. 31, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Giorgio Servalli, Fara Gera d'Adda, IT;

Marcello Mariani, Milan, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 51/50 (2023.01); H01L 25/065 (2023.01); H10D 30/67 (2025.01); H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/50 (2023.02); H01L 25/0655 (2013.01); H10D 30/6728 (2025.01); H10B 53/30 (2023.02);
Abstract

Some embodiments include an integrated assembly having first and second pillars of semiconductor material. The first pillar includes a first source/drain region, and the second pillar includes a second source/drain region. First and second bottom electrodes are coupled with the first and second source/drain regions, respectively. The first and second source/drain regions are spaced from one another by an intervening region. First and second leaker-device-structures extend into the intervening region from the first and second bottom electrodes, respectively. Top-electrode-material extends into the intervening region and contacts the first and second leaker-device-structures. Ferroelectric-insulative-material is between the top-electrode-material and the bottom electrodes. Some embodiments include methods of forming integrated assemblies.


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