The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jul. 27, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Bingjie Yan, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
Aspects of the disclosure provide a memory system, a semiconductor device and fabrication method for the semiconductor device. The semiconductor device includes a memory stack with gate layers and insulating layers, and the gate layers and the insulating layers are stacked alternatingly. The semiconductor device also includes a first channel structure formed in a first channel hole in the memory stack. The first channel structure includes a channel plug in connection with a channel layer of the first channel structure. The semiconductor device also includes an isolation stack including a landing liner layer and an isolation layer. A first portion of the landing liner layer is laid on the channel plug. The semiconductor device includes a first contact structure formed in the isolation stack. The first contact structure is connected to the channel plug via an opening in the first portion of the landing liner layer.