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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12453091 B1

PDFFull Text
Date of Patent:
Oct. 21, 2025

Filed:

May. 04, 2022

Method of fabricating integrated circuit device and method of fabricating electronic system having the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sangmin Kang, Hwaseong-si, KR;

Hyungjoon Kim, Yongin-si, KR;

Woojin Jang, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Morgan, Lewis & Bockius LLP

Primary Examiner:

Michelle Mandala

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A method of fabricating an integrated circuit device includes forming on a semiconductor substrate a mold stack that includes a plurality of insulating layers and a plurality of mold layers alternately arranged. A mask pattern including an opening is formed on the mold stack. A channel hole is formed by removing the mold stack exposed through the opening. A sacrificial film is formed on a lateral wall of the mold stack exposed through the channel hole. An oxidation process is performed on the sacrificial film and the mold stack to convert the sacrificial film to a sacrificial oxide film. An etching process is performed to remove the sacrificial oxide film.

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