The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jul. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Jhon Jhy Liaw, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10B 10/00 (2023.01); H10D 30/62 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H10D 30/62 (2025.01); H10D 84/853 (2025.01); H10D 89/10 (2025.01);
Abstract

An structure includes: first, second, third, fourth, and fifth dielectric fins disposed in this order along a first direction and oriented lengthwise along a second direction; a first semiconductor fin structure disposed between the first and the second dielectric fins; a second semiconductor fin structure disposed between the fourth and the fifth dielectric fins; a third semiconductor fin structure disposed between the second and the third dielectric fins; a fourth semiconductor fin structure disposed between the third and the fourth dielectric fins, where each of the first, the second, the third and the fourth semiconductor fins are oriented lengthwise along the second direction; and gate structures oriented lengthwise along the first direction, where the gate structures engage with one or more of the dielectric fin.


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