The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jul. 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-An Lai, Taipei, TW;
Pen Chieh Yu, Hsinchu, TW;
Chan-Hong Chern, Palo Alto, CA (US);
Cheng-Hsiang Hsieh, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a transistor comprising: a plurality of layers, wherein each of the plurality of layers has at least one Group III-V compound material; a gate electrode operatively coupled to at least one of the plurality of layers; a source electrode disposed on a first side of the gate electrode; a drain electrode disposed on a second side of the gate electrode; a field plate disposed between the gate electrode and the drain electrode; and a plurality of conductive lines disposed above the gate electrode, the source electrode, and the drain electrode. The semiconductor device further includes a plurality of test structures, wherein each of the test structures, including a first metal pattern and a second metal pattern, emulates at least one of the gate electrode, the source electrode, the drain electrode, the field plate, or at least one of the plurality of conductive lines.