The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Sep. 27, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Doo Gyu Lee, Suwon-si, KR;

Jeong Jin Lee, Suwon-si, KR;

Min-Cheol Kwak, Suwon-si, KR;

Seung Yoon Lee, Suwon-si, KR;

Chan Hwang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 22/12 (2013.01);
Abstract

A method for fabricating a semiconductor device using an overlay measurement and a semiconductor device fabricated by the method are provided. The method includes forming a lower pattern including a lower overlay key pattern having a first pitch, on a substrate, forming an upper pattern including an upper overlay key pattern having a second pitch different from the first pitch, on the lower pattern, measuring an overlay between the lower overlay key pattern and the upper overlay key pattern, removing the upper overlay key pattern, and after removing the upper overlay key pattern, performing an etching process using the upper pattern as an etching mask.


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