The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 25, 2020
SK Hynix Nand Product Solutions Corp., Rancho Cordova, CA (US);
Aravinda Radhakrishnan, Sunnyvale, CA (US);
Marcus Wing-Kin Cheung, Cupertino, CA (US);
Dinesh Somasekhar, Portland, OR (US);
Naga Mallika Bhandaru, Fremont, CA (US);
Michael Nelms, Fort Collins, CO (US);
Rodrigo Gonzalez Gutierrez, Hillsboro, OR (US);
Kaitlyn Chen, Hillsboro, OR (US);
SK Hynix NAND Product Solutions Corp., Rancho Cordova, CA (US);
Abstract
Techniques and mechanisms for a memory device to support memory repair functionality for a column of a memory array. In an embodiment, the column comprises first memory cells and second memory cells, where switch circuitry is coupled between multiple signal lines and the column. Control circuitry transitions the switch circuitry to a state which corresponds to a defective one of the first cells. The state switchedly decouples the defective cell, and an adjoining one of the first cells, each from respective ones of the signal lines. During the state, two or more of the signal lines are able to communicate each to a different respective one of the second cells. In another embodiment, the switch circuitry is transitioned to the state based on an identifier of the defective cell, and independent of whether any other cell of the column has been identified as defective.