The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 22, 2023
Meiden Nanoprocess Innovations, Inc., Tokyo, JP;
Takayuki Hagiwara, Matsudo, JP;
Naoto Kameda, Moriya, JP;
MEIDEN NANOPROCESS INNOVATIONS, INC., Tokyo, JP;
Abstract
An oxide film formed on a film formation surface of a film formation target housed in a chamber includes a first film formed on the film formation surface and a second film formed on a first film surface. The first film is formed on the film formation surface of the film formation target by an ALD first film formation method that uses only an at least 80 volume % ozone gas as an oxidizing agent. The second film is formed on the first film surface by an ALD or CVD second film formation method that is different from the first film formation method. The second film formation method uses OH radicals generated by a radical reaction between high-concentration ozone gas and unsaturated hydrocarbon gas as an oxidizing agent and makes use of the oxidizing power of the radicals to form the oxide film.